Part Details for FQB19N20TM by onsemi
Overview of FQB19N20TM by onsemi
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQB19N20TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
23AC5312
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Newark | Qf 200V 150Mohm D2Pak Rohs Compliant: Yes |Onsemi FQB19N20TM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1600 | Buy Now |
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DISTI #
38C7244
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Newark | Mosfet, N-Ch, 200V, 19.4A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:19.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQB19N20TM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1600 | Buy Now |
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DISTI #
FQB19N20TMCT-ND
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DigiKey | MOSFET N-CH 200V 19.4A D2PAK Min Qty: 1 Lead time: 36 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1470 In Stock |
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$0.9364 / $2.1600 | Buy Now |
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DISTI #
FQB19N20TM
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Avnet Americas | Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB19N20TM) RoHS: Compliant Min Qty: 926 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 42403 Partner Stock |
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$0.6696 / $0.7992 | Buy Now |
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DISTI #
FQB19N20TM
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Avnet Americas | Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB19N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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$0.9706 / $1.0864 | Buy Now |
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DISTI #
512-FQB19N20TM
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Mouser Electronics | MOSFET 200V N-Ch QFET Logic Level RoHS: Compliant | 744 |
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$1.0400 / $2.1400 | Buy Now |
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DISTI #
V72:2272_06301146
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Arrow Electronics | Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 2244 Container: Cut Strips | Americas - 786 |
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$0.9288 / $1.1026 | Buy Now |
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Future Electronics | N-Channel 200 V 0.15 Ohm Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 6 Weeks Container: Reel | 0Reel |
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$0.9100 / $0.9850 | Buy Now |
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Future Electronics | N-Channel 200 V 0.15 Ohm Surface Mount Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 36 Weeks Container: Reel | 0Reel |
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$0.9100 / $0.9850 | Buy Now |
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DISTI #
66461197
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Verical | Trans MOSFET N-CH 200V 19.4A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2244 | Americas - 786 |
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$0.9288 / $1.1026 | Buy Now |
Part Details for FQB19N20TM
FQB19N20TM CAD Models
FQB19N20TM Part Data Attributes
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FQB19N20TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB19N20TM
onsemi
Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 19.4 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB19N20TM
This table gives cross-reference parts and alternative options found for FQB19N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB19N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF640S | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | FQB19N20TM vs IRF640S |
| MTP20N20E | 20A, 200V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | FQB19N20TM vs MTP20N20E |
| IRF640NSTRRPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 | Infineon Technologies AG | FQB19N20TM vs IRF640NSTRRPBF |
| IRF642-006 | Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | FQB19N20TM vs IRF642-006 |
| FQB19N20CTM | Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, D2PAK, 800-REEL | onsemi | FQB19N20TM vs FQB19N20CTM |
| FQB19N20TM | 19.4A, 200V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FQB19N20TM vs FQB19N20TM |
| IRF640STRR | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | FQB19N20TM vs IRF640STRR |
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | FQB19N20TM vs IRF640STRL |
| IRF640SPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | FQB19N20TM vs IRF640SPBF |
| IRF640NS | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 | Infineon Technologies AG | FQB19N20TM vs IRF640NS |