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Transistors / Power Field-Effect Transistors / FQB27P06TM
Datasheets
FQB27P06TM by:
onsemi

Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL

Part Details for FQB27P06TM by onsemi

Results Overview of FQB27P06TM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FQB27P06TM Information

FQB27P06TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQB27P06TM

Part # Distributor Description Stock Price Buy
DISTI # 58K1517
Newark Mosfet, P, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:27A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Power Dissipation:120W Rohs Compliant: Yes |Onsemi FQB27P06TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 27
  • 1 $2.6700
  • 10 $1.8300
$1.8300 / $2.6700 Buy Now
DISTI # 29X6713
Newark Mosfet, P Channel, -60V, 27A, To-263-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:27A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQB27P06TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.4700
  • 3,000 $1.4000
  • 6,000 $1.3500
  • 12,000 $1.2500
  • 18,000 $1.2100
  • 30,000 $1.1800
$1.1800 / $1.4700 Buy Now
DISTI # 58K1517
Avnet Americas - Product that comes on tape, but is not reeled (Alt: 58K1517) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 27 Partner Stock
  • 1 $1.7900
  • 10 $1.6900
  • 25 $1.6800
  • 50 $1.4600
  • 100 $1.2300
$1.2300 / $1.7900 Buy Now
DISTI # FQB27P06TM
Avnet Americas - Tape and Reel (Alt: FQB27P06TM) COO: Korea (the Republic of) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 800 $0.9431
  • 1,600 $0.8922
  • 3,200 $0.8687
  • 6,400 $0.8464
  • 12,800 $0.8253
$0.8253 / $0.9431 Buy Now
DISTI # FQB27P06TM
TME Transistor: P-MOSFET, unipolar, -60V, -19.1A, 120W, D2PAK Min Qty: 1 0
  • 1 $2.2300
  • 5 $1.8600
  • 10 $1.6800
  • 25 $1.4500
  • 50 $1.3100
  • 100 $1.2300
$1.2300 / $2.2300 RFQ
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 28
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # FQB27P06TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $0.8300
$0.8300 Buy Now
DISTI # FQB27P06TM
Avnet Asia (Alt: FQB27P06TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days 0
RFQ
DISTI # FQB27P06TM
Avnet Silica (Alt: FQB27P06TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now
Chip Stock P-ChannelPowerMOSFET,QFET®,-60V,-27A,70mΩ,D2PAK 37026
RFQ
Component Electronics, Inc SMT 800/TR 499
  • 1 $15.3800
  • 100 $11.5400
  • 1,000 $10.0000
$10.0000 / $15.3800 Buy Now
DISTI # FQB27P06TM
EBV Elektronik (Alt: FQB27P06TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 287
RFQ
LCSC 60V 27A 70m10V13.5A 3.75W 1 P-Channel TO-263(D2PAK) Single FETs MOSFETs RoHS 5
  • 1 $2.4566
  • 10 $2.0789
  • 30 $1.8425
  • 100 $1.5999
  • 500 $1.4909
  • 800 $1.4433
$1.4433 / $2.4566 Buy Now

Part Details for FQB27P06TM

FQB27P06TM CAD Models

  • Part Symbol

    schematic symbol

  • Footprint

    pcb footprint

  • 3D Model

    2d presentation

Available Download Formats

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FQB27P06TM Part Data Attributes

Parametric Data
FQB27P06TM onsemi
Buy Now Datasheet
Compare Parts:
FQB27P06TM onsemi Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code D2PAK-3 / TO-263-2
Package Description D2pak-3
Manufacturer Package Code 418AJ
Reach Compliance Code Not Compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 560 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-Channel
Power Dissipation-Max (Abs) 120 W
Pulsed Drain Current-Max (IDM) 108 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Matte Tin (Sn) - Annealed
Terminal Form Gull Wing
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for FQB27P06TM

This table gives cross-reference parts and alternative options found for FQB27P06TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB27P06TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR5305TRPBF International Rectifier $0.3653 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 FQB27P06TM vs IRFR5305TRPBF
AUIRFR5305 International Rectifier Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 FQB27P06TM vs AUIRFR5305
IRFR5305TR International Rectifier Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 FQB27P06TM vs IRFR5305TR
SP001567854 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 FQB27P06TM vs SP001567854
2SJ402(TO-220FL) Toshiba America Electronic Components Check for Price TRANSISTOR 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power FQB27P06TM vs 2SJ402(TO-220FL)
IRFR5305TRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 FQB27P06TM vs IRFR5305TRRPBF
AUIRFR5305TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 FQB27P06TM vs AUIRFR5305TR
IRFR5305TRL International Rectifier Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 FQB27P06TM vs IRFR5305TRL
IRFR5305PBF International Rectifier Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 FQB27P06TM vs IRFR5305PBF
IRFR5305HR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 FQB27P06TM vs IRFR5305HR
equivalents icon

FQB27P06TM Related Parts

FQB27P06TM Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQB27P06TM is -55°C to 150°C.

  • To ensure proper biasing, the FQB27P06TM requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 10V and 60V. Additionally, a gate resistor (Rg) of 1kΩ to 10kΩ is recommended to prevent oscillations.

  • The maximum current rating for the FQB27P06TM is 27A, with a pulsed current rating of 54A.

  • To protect the FQB27P06TM from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.

  • The thermal resistance of the FQB27P06TM is 2.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient).

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