Transistors
FQB7N20TM
Fairchild Semiconductor Corporation
Description: Power Field-Effect Transistor, 6.6A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Overview of FQB7N20TM by Fairchild Semiconductor Corporation

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Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for FQB7N20TM by Fairchild Semiconductor Corporation

FQB7N20TM
Fairchild Semiconductor Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
73 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
6.6 A
Drain-source On Resistance-Max
0.69 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
63 W
Pulsed Drain Current-Max (IDM)
26 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FQB7N20TM
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 6.6A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
    VS

Alternate Parts for FQB7N20TM

This table gives cross-reference parts and alternative options found for FQB7N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB7N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQB7N20 Power Field-Effect Transistor, 6.6A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB7N20TM vs FQB7N20
Part Number Description Manufacturer Compare
IRFW620A Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation FQB7N20TM vs IRFW620A
FQB7N20 Power Field-Effect Transistor, 6.6A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB7N20TM vs FQB7N20
IRF620S 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC FQB7N20TM vs IRF620S
IRFW620A Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Samsung Semiconductor FQB7N20TM vs IRFW620A
IRF620STRL Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier FQB7N20TM vs IRF620STRL
IRF620S Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products FQB7N20TM vs IRF620S
FS7VS-5 Power Field-Effect Transistor, 7A I(D), 250V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric FQB7N20TM vs FS7VS-5
SIHF620STRL-GE3 TRANSISTOR 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix FQB7N20TM vs SIHF620STRL-GE3
FS7VS-5 7A, 250V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S, 3 PIN Renesas Electronics Corporation FQB7N20TM vs FS7VS-5
SIHF620S-GE3 TRANSISTOR 5.2 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix FQB7N20TM vs SIHF620S-GE3

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