-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for FQD10N20CTM by onsemi
Overview of FQD10N20CTM by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for FQD10N20CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
31K6825
|
Newark | Mosfet Transistor, N Channel, 7.8 A, 200 V, 0.29 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FQD10N20CTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | |
|
DISTI #
31Y1520
|
Newark | Mosfet, N-Ch, 200V, 7.8A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:7.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD10N20CTM Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
|
Bristol Electronics | 161 |
|
RFQ | ||
|
DISTI #
FQD10N20CTM
|
TME | Transistor: N-MOSFET, unipolar, 200V, 5A, 50W, DPAK Min Qty: 1 | 0 |
|
$0.2980 / $0.8210 | RFQ |
|
DISTI #
FQD10N20CTM
|
Avnet Asia | (Alt: FQD10N20CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 11 Weeks, 0 Days | 0 |
|
$0.2201 / $0.2686 | Buy Now |
|
DISTI #
2453893RL
|
Farnell | MOSFET, N-CH, 200V, 7.8A, TO-252AA-3 RoHS: Compliant Min Qty: 100 Lead time: 32 Weeks, 1 Days Container: Reel | 0 |
|
$0.4296 / $0.6805 | Buy Now |
|
DISTI #
2453893
|
Farnell | MOSFET, N-CH, 200V, 7.8A, TO-252AA-3 RoHS: Compliant Min Qty: 5 Lead time: 32 Weeks, 1 Days Container: Cut Tape | 0 |
|
$0.4296 / $1.0021 | Buy Now |
|
|
Flip Electronics | Stock, ship today | 493 |
|
$0.1100 | RFQ |
Part Details for FQD10N20CTM
FQD10N20CTM CAD Models
FQD10N20CTM Part Data Attributes
|
|
FQD10N20CTM
onsemi
Buy Now
Datasheet
|
Compare Parts:
FQD10N20CTM
onsemi
Power MOSFET, N-Channel, QFET®, 200 V, 10 A, 360 mΩ, DPAK, 2500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 7 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 7.8 A | |
| Drain-source On Resistance-Max | 0.36 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 31.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD10N20CTM
This table gives cross-reference parts and alternative options found for FQD10N20CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD10N20CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD10N20CTM | 7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3 | Rochester Electronics LLC | FQD10N20CTM vs FQD10N20CTM |
| FQD10N20CTM | Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD10N20CTM vs FQD10N20CTM |