Part Details for FQD3N60CTM_WS by onsemi
Overview of FQD3N60CTM_WS by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD3N60CTM_WS
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
08N9507
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Newark | 600V, 2.4A, Nch, Mosfet Qfet/Tape Reel |Onsemi FQD3N60CTM_WS Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Part Details for FQD3N60CTM_WS
FQD3N60CTM_WS CAD Models
FQD3N60CTM_WS Part Data Attributes
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FQD3N60CTM_WS
onsemi
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Datasheet
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FQD3N60CTM_WS
onsemi
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ω, TO-252 3L (DPAK), 30000-TAPE REEL
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Manufacturer Package Code | TO252A03 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 45 Weeks | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 2.4 A | |
Drain-source On Resistance-Max | 3.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 9.6 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQD3N60CTM_WS
This table gives cross-reference parts and alternative options found for FQD3N60CTM_WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD3N60CTM_WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQD3N60CTM-WS | Power MOSFET, N-Channel, QFET®, 600 V, 2.4 A, 3.4 Ω, DPAK, TO-252 3L (DPAK), 2500-REEL | onsemi | FQD3N60CTM_WS vs FQD3N60CTM-WS |