Part Details for FQD7P06 by Fairchild Semiconductor Corporation
Overview of FQD7P06 by Fairchild Semiconductor Corporation
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for FQD7P06
FQD7P06 CAD Models
FQD7P06 Part Data Attributes
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FQD7P06
Fairchild Semiconductor Corporation
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Datasheet
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FQD7P06
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 5.4 A | |
Drain-source On Resistance-Max | 0.451 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 28 W | |
Pulsed Drain Current-Max (IDM) | 21.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQD7P06
This table gives cross-reference parts and alternative options found for FQD7P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD7P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQD7P06TM | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD7P06 vs FQD7P06TM |
FQD7P06TM | Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL | onsemi | FQD7P06 vs FQD7P06TM |