Datasheets
FQD7P06 by:

Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for FQD7P06 by Fairchild Semiconductor Corporation

Overview of FQD7P06 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Education and Research Internet of Things (IoT) Aerospace and Defense Agriculture Technology Robotics and Drones

Part Details for FQD7P06

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FQD7P06 Part Data Attributes

FQD7P06 Fairchild Semiconductor Corporation
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FQD7P06 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 90 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 5.4 A
Drain-source On Resistance-Max 0.451 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 21.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD7P06

This table gives cross-reference parts and alternative options found for FQD7P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD7P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD7P06TM Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD7P06 vs FQD7P06TM
FQD7P06TM Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL onsemi FQD7P06 vs FQD7P06TM
Part Number Description Manufacturer Compare
SFR9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 Fairchild Semiconductor Corporation FQD7P06 vs SFR9024
SFR9024TF 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FQD7P06 vs SFR9024TF
SFW9Z14TM Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQD7P06 vs SFW9Z14TM
SPD08P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Infineon Technologies AG FQD7P06 vs SPD08P05
SFR9024TF Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD7P06 vs SFR9024TF
RFD8P06ESM9A Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation FQD7P06 vs RFD8P06ESM9A
RFD8P06ESM Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation FQD7P06 vs RFD8P06ESM
FQD7P06TM Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL onsemi FQD7P06 vs FQD7P06TM
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor FQD7P06 vs SFW9Z24
SFR2955 Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD7P06 vs SFR2955

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