Part Details for FQD7P20TF by Fairchild Semiconductor Corporation
Results Overview of FQD7P20TF by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Space Technology
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
FQD7P20TF Information
FQD7P20TF by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQD7P20TF
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 200V P-CHANNEL MOSFET Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 1144 |
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RFQ |
Part Details for FQD7P20TF
FQD7P20TF CAD Models
FQD7P20TF Part Data Attributes
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FQD7P20TF
Fairchild Semiconductor Corporation
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Datasheet
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FQD7P20TF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 570 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.7 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Pulsed Drain Current-Max (IDM) | 22.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD7P20TF
This table gives cross-reference parts and alternative options found for FQD7P20TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD7P20TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQD7P20TM | onsemi | $0.6155 | Power MOSFET, P-Channel, QFET®, -200 V, -5.7 A, 690 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL | FQD7P20TF vs FQD7P20TM |
| FQD7P20TF | Rochester Electronics LLC | Check for Price | 5.7A, 200V, 0.69ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | FQD7P20TF vs FQD7P20TF |
FQD7P20TF Frequently Asked Questions (FAQ)
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Fairchild recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal plate for further heat dissipation.
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To ensure proper biasing, Fairchild recommends using a gate driver with a voltage rating that matches the device's Vgs rating. The gate driver should be able to provide a sufficient current to charge and discharge the gate capacitance quickly. Additionally, the device should be operated within the recommended operating conditions, including voltage, current, and temperature ranges.
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Engineers should monitor the device's junction temperature (Tj), drain-source voltage (Vds), gate-source voltage (Vgs), and drain current (Id) to ensure safe and optimal operation. Exceeding the recommended maximum ratings for these parameters can lead to device failure or reduced lifespan.
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Fairchild recommends handling the device with ESD-protective equipment, such as wrist straps or mats, to prevent static electricity from damaging the device. Additionally, the device should be stored in ESD-protective packaging, and PCBs should be designed with ESD protection in mind, such as using ESD diodes or resistors.
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Fairchild provides reliability data in the datasheet, including the device's mean time to failure (MTTF) and mean time between failures (MTBF). The device's lifespan is dependent on various factors, including operating conditions, temperature, and usage patterns. Engineers should consult the datasheet and Fairchild's application notes for more information on reliability and lifespan expectations.