Datasheets
FQI12N60TU by:

Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Part Details for FQI12N60TU by Fairchild Semiconductor Corporation

Overview of FQI12N60TU by Fairchild Semiconductor Corporation

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Price & Stock for FQI12N60TU

Part # Distributor Description Stock Price Buy
Rochester Electronics 10.5A, 600V, 0.7ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 627
  • 1 $1.4300
  • 25 $1.4000
  • 100 $1.3500
  • 500 $1.2900
  • 1,000 $1.2200
$1.2200 / $1.4300 Buy Now

Part Details for FQI12N60TU

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FQI12N60TU Part Data Attributes

FQI12N60TU Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQI12N60TU Fairchild Semiconductor Corporation Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-262AA
Package Description I2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 790 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10.5 A
Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQI12N60TU

This table gives cross-reference parts and alternative options found for FQI12N60TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI12N60TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQI12N60TU 10.5A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3 Rochester Electronics LLC FQI12N60TU vs FQI12N60TU
Part Number Description Manufacturer Compare
2SK2777(2-10S1B) TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components FQI12N60TU vs 2SK2777(2-10S1B)
IRFSL9N60ATRL Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier FQI12N60TU vs IRFSL9N60ATRL
IRF840LCLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier FQI12N60TU vs IRF840LCLPBF
2SK3930-01L Power Field-Effect Transistor, 11A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN Fuji Electric Co Ltd FQI12N60TU vs 2SK3930-01L
FQI2N60 Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation FQI12N60TU vs FQI2N60
IRFSL11N50A Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN International Rectifier FQI12N60TU vs IRFSL11N50A
IRFSL9N60APBF Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN Vishay Siliconix FQI12N60TU vs IRFSL9N60APBF
IRF830ALPBF Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 Vishay Siliconix FQI12N60TU vs IRF830ALPBF
SSI7N60BTU Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation FQI12N60TU vs SSI7N60BTU
2SK3312(2-10S1B) TRANSISTOR 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components FQI12N60TU vs 2SK3312(2-10S1B)

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