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Part Details for FQP50N06 by onsemi
Results Overview of FQP50N06 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQP50N06 Information
FQP50N06 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP50N06
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQP50N06
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Avnet Silica | (Alt: FQP50N06) RoHS: Compliant Min Qty: 2000 Package Multiple: 50 Lead time: 100 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip Stock | PowerMOSFET,N-Channel,QFET®,60V,50A,22mΩ,TO-220 | 5016 |
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RFQ |
Part Details for FQP50N06
FQP50N06 CAD Models
FQP50N06 Part Data Attributes
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FQP50N06
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP50N06
onsemi
Power MOSFET, N-Channel, QFET®, 60 V, 50 A, 22 mΩ, TO-220, TO-220-3, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220-3 | |
| Package Description | To-220, 3 Pin | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 39 Weeks, 4 Days | |
| Date Of Intro | 1999-12-07 | |
| Avalanche Energy Rating (Eas) | 490 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for FQP50N06
This table gives cross-reference parts and alternative options found for FQP50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQP50N06 | Rochester Electronics LLC | Check for Price | 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQP50N06 vs FQP50N06 |
| FQP50N06_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | FQP50N06 vs FQP50N06_NL |
| FQP50N06J69Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP50N06 vs FQP50N06J69Z |
| FQP50N06 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP50N06 vs FQP50N06 |
| FQP50N06L-EPKE0003 | onsemi | Check for Price | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FQP50N06 vs FQP50N06L-EPKE0003 |
FQP50N06 Frequently Asked Questions (FAQ)
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The maximum SOA for the FQP50N06 is typically defined by the device's voltage and current ratings. For this device, the maximum SOA is approximately 50V and 50A. However, it's essential to consult the datasheet and application notes for specific guidance on SOA and thermal management.
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Proper thermal management is crucial for the FQP50N06. Ensure good thermal contact between the device and a heat sink, and consider using thermal interface materials (TIMs) to minimize thermal resistance. Also, follow the recommended PCB layout and thermal design guidelines in the datasheet and application notes.
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The recommended gate drive voltage for the FQP50N06 is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information on gate drive requirements.
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Yes, the FQP50N06 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is optimized for high-frequency operation. Consult the datasheet and application notes for more information on high-frequency operation.
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To protect the FQP50N06 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the device is properly grounded during handling and assembly, and consider using ESD protection devices in the circuit design.