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Power MOSFET, N-Channel, QFET®, 60 V, 65 A, 16 mΩ, TO-220, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97K0193
|
Newark | Mosfet Transistor, N Channel, 65 A, 60 V, 16 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FQP65N06 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.0700 / $2.4400 | Buy Now |
DISTI #
18C6575
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Newark | N Channel Mosfet, 60V, 65A, To-220, Transistor Polarity:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:65A, On Resistance Rds(On):0.016Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V, Msl:- Rohs Compliant: Yes |Onsemi FQP65N06 Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.3100 / $1.7500 | Buy Now |
DISTI #
SMC-FQP65N06
|
Sensible Micro Corporation | AS6081 Certified Vendor, Ships Same day, 1 Year Warranty RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Tubes | 6 |
|
$2.0995 / $2.3465 | RFQ |
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FQP65N06
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP65N06
onsemi
Power MOSFET, N-Channel, QFET®, 60 V, 65 A, 16 mΩ, TO-220, 1000-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 650 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 65 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 260 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQP65N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP65N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQP65N06J69Z | Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQP65N06 vs FQP65N06J69Z |