Part Details for FQPF12P10 by Fairchild Semiconductor Corporation
Overview of FQPF12P10 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQPF12P10
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 8.2A, 100V, 0.29ohm, P-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 114717 |
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$0.4931 / $0.5801 | Buy Now |
Part Details for FQPF12P10
FQPF12P10 CAD Models
FQPF12P10 Part Data Attributes
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FQPF12P10
Fairchild Semiconductor Corporation
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Datasheet
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FQPF12P10
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8.2A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220F, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 370 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 8.2 A | |
Drain-source On Resistance-Max | 0.29 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 38 W | |
Pulsed Drain Current-Max (IDM) | 32.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQPF12P10
This table gives cross-reference parts and alternative options found for FQPF12P10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF12P10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQPF27P06 | Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | FQPF12P10 vs FQPF27P06 |
FQPF12P10 | 8.2A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN | Rochester Electronics LLC | FQPF12P10 vs FQPF12P10 |
FQP22P10 | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQPF12P10 vs FQP22P10 |
FQA47P06 | Power Field-Effect Transistor, 55A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FQPF12P10 vs FQA47P06 |