Datasheets
FQPF13N50C by:

13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN

Part Details for FQPF13N50C by Rochester Electronics LLC

Overview of FQPF13N50C by Rochester Electronics LLC

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Part Details for FQPF13N50C

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FQPF13N50C Part Data Attributes

FQPF13N50C Rochester Electronics LLC
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FQPF13N50C Rochester Electronics LLC 13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-220AB
Package Description TO-220F, 3 PIN
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 860 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.48 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQPF13N50C

This table gives cross-reference parts and alternative options found for FQPF13N50C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF13N50C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF10N60C 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN Rochester Electronics LLC FQPF13N50C vs FQPF10N60C
FDU6644 67A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 Rochester Electronics LLC FQPF13N50C vs FDU6644
SSS6N70A 4A, 700V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC FQPF13N50C vs SSS6N70A
2SK3461S 85A, 60V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation FQPF13N50C vs 2SK3461S
FQP5P20 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC FQPF13N50C vs FQP5P20
FQAF17N40 12.2A, 400V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN Rochester Electronics LLC FQPF13N50C vs FQAF17N40
SPB30N03L Power Field-Effect Transistor, 30A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Siemens FQPF13N50C vs SPB30N03L
FDD26AN06A0 7A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 Rochester Electronics LLC FQPF13N50C vs FDD26AN06A0
IRFAC30 3.6A, 600V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC FQPF13N50C vs IRFAC30
IRFIP440 Power Field-Effect Transistor, 6.4A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 International Rectifier FQPF13N50C vs IRFIP440

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