Part Details for FQPF13N50C by Rochester Electronics LLC
Overview of FQPF13N50C by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQPF13N50C
FQPF13N50C CAD Models
FQPF13N50C Part Data Attributes
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FQPF13N50C
Rochester Electronics LLC
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Datasheet
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FQPF13N50C
Rochester Electronics LLC
13A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | TO-220AB | |
Package Description | TO-220F, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 860 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.48 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | NOT APPLICABLE | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 52 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQPF13N50C
This table gives cross-reference parts and alternative options found for FQPF13N50C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF13N50C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SSP4N80AS | Power Field-Effect Transistor, 4.5A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | FQPF13N50C vs SSP4N80AS |
FQP19N10L | 19A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FQPF13N50C vs FQP19N10L |
IRF742R | 8A, 400V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | FQPF13N50C vs IRF742R |
SSF10N90A | Power Field-Effect Transistor, 6.5A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | FQPF13N50C vs SSF10N90A |
IRF831R | 4.5A, 450V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | FQPF13N50C vs IRF831R |
IRFS650B | 28A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN | Rochester Electronics LLC | FQPF13N50C vs IRFS650B |
SPB80N03L | Power Field-Effect Transistor, 80A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | FQPF13N50C vs SPB80N03L |
SSS6N70A | Power Field-Effect Transistor, 4A I(D), 700V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Samsung Semiconductor | FQPF13N50C vs SSS6N70A |
IRF351 | Power Field-Effect Transistor, 15A I(D), 350V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | FQPF13N50C vs IRF351 |
FQA7N80C | 7A, 800V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | FQPF13N50C vs FQA7N80C |