Part Details for FQPF13N50CT by Fairchild Semiconductor Corporation
Overview of FQPF13N50CT by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for FQPF13N50CT
FQPF13N50CT CAD Models
FQPF13N50CT Part Data Attributes
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FQPF13N50CT
Fairchild Semiconductor Corporation
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Datasheet
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FQPF13N50CT
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, SC-91A, TO-220F, FULL PACK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220F | |
| Package Description | PLASTIC, SC-91A, TO-220F, FULL PACK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 860 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.48 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF13N50CT
This table gives cross-reference parts and alternative options found for FQPF13N50CT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF13N50CT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FMV12N50ES | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(SLS), 3 PIN | Fuji Electric Co Ltd | FQPF13N50CT vs FMV12N50ES |
| IRHM8450PBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3 | Infineon Technologies AG | FQPF13N50CT vs IRHM8450PBF |
| SSF13N50F | Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | FQPF13N50CT vs SSF13N50F |
| ZDX130N50 | Power Field-Effect Transistor, 13A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | FQPF13N50CT vs ZDX130N50 |
| FQPF13N50C_G | Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, SC-91A, TO-220F, FULL PACK-3 | Fairchild Semiconductor Corporation | FQPF13N50CT vs FQPF13N50C_G |
| 11N50G-TF1-T | Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | FQPF13N50CT vs 11N50G-TF1-T |
| 12N50G-TF1-T | Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | FQPF13N50CT vs 12N50G-TF1-T |
| 11N50G-TF3-T | Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Unisonic Technologies Co Ltd | FQPF13N50CT vs 11N50G-TF3-T |
| FMI12N50E | Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TPACK-3 | Fuji Electric Co Ltd | FQPF13N50CT vs FMI12N50E |
| 12N50L-TF1-T | Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F1, 3 PIN | Unisonic Technologies Co Ltd | FQPF13N50CT vs 12N50L-TF1-T |