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Transistors Power Field-Effect Transistors FQPF6N90

Transistors
FQPF6N90
Description: Power Field-Effect Transistor, 3.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Overview of FQPF6N90 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

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Part Data Attributes for FQPF6N90 by Fairchild Semiconductor Corporation
Parametric Data

FQPF6N90
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-220AB
Package Description
TO-220F, 3 PIN
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
710 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
900 V
Drain Current-Max (ID)
3.4 A
Drain-source On Resistance-Max
1.9 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
56 W
Pulsed Drain Current-Max (IDM)
13.6 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FQPF6N90
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 3.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
    VS

Alternate Parts for FQPF6N90

This table gives cross-reference parts and alternative options found for FQPF6N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF6N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQAF6N90 Power Field-Effect Transistor, 4.5A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fairchild Semiconductor Corporation FQPF6N90 vs FQAF6N90
FQPF8N90C Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F, 1000-TUBE onsemi FQPF6N90 vs FQPF8N90C
Part Number Description Manufacturer Compare
2SK2953 TRANSISTOR 15 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16F1B, 3 PIN, FET General Purpose Power Toshiba America Electronic Components FQPF6N90 vs 2SK2953
FQAF6N90 Power Field-Effect Transistor, 4.5A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN Fairchild Semiconductor Corporation FQPF6N90 vs FQAF6N90
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier FQPF6N90 vs IRFZ44EPBF
FQAF6N90 4.5A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN Rochester Electronics LLC FQPF6N90 vs FQAF6N90
IRFZ44E Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier FQPF6N90 vs IRFZ44E
IRFZ44E Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG FQPF6N90 vs IRFZ44E
IRFZ44EPBF Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG FQPF6N90 vs IRFZ44EPBF
FQPF8N90C Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F, 1000-TUBE onsemi FQPF6N90 vs FQPF8N90C

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