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Part Details for FQPF6N90C by onsemi
Results Overview of FQPF6N90C by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (4 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQPF6N90C Information
FQPF6N90C by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQPF6N90C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84H4765
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Newark | Transistor Mosfets Rohs Compliant: Yes |Onsemi FQPF6N90C RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 4095 |
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$0.7316 / $1.1800 | Buy Now |
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Chip Stock | PowerMosfet,N-channel,Qfet®,900V,6A,2.3Ω,TO-220F | 18500 |
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RFQ | |
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Flip Electronics | Stock, Ship Today | 10000 |
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RFQ |
Part Details for FQPF6N90C
FQPF6N90C CAD Models
FQPF6N90C Part Data Attributes
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FQPF6N90C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQPF6N90C
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | To-220f, 3 Pin | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 650 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 2.3 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 56 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for FQPF6N90C
This table gives cross-reference parts and alternative options found for FQPF6N90C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF6N90C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQAF5N90 | Rochester Electronics LLC | Check for Price | 4.1A, 900V, 2.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | FQPF6N90C vs FQAF5N90 |
FQPF6N90C Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQPF6N90C is not explicitly stated in the datasheet, but it can be determined by consulting the onsemi application note AND8193/D, which provides guidelines for calculating the SOA for power MOSFETs.
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To ensure proper thermal management, it is recommended to follow the thermal design guidelines outlined in the onsemi application note AND8194/D, which provides guidance on thermal interface materials, heat sink selection, and thermal resistance calculations.
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The recommended gate drive voltage for the FQPF6N90C is between 10V and 15V, as specified in the datasheet. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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Yes, the FQPF6N90C can be used in high-frequency switching applications, but it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations.
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The internal diode of the FQPF6N90C can be handled by using a diode clamp circuit or a snubber circuit to prevent voltage spikes and ringing during switching. The specific implementation will depend on the application and switching frequency.