Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Symbol
Footprint
3D Model
Manufacturer Package Code
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Operating Temperature-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Transistor Element Material
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Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F, 1000-TUBE
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FQAF5N90 - Rochester Electronics LLC
FQPF6N90CT - Fairchild Semiconductor Corporation
FQPF6N90C_NL - Fairchild Semiconductor Corporation
FQPF6N90CT - Fairchild Semiconductor Corporation
IRFMG50UPBF - Infineon Technologies AG
This table gives cross-reference parts and alternative options found for FQPF6N90C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF6N90C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
Compare
FQAF5N90
4.1A, 900V, 2.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN
Rochester Electronics LLC
FQPF6N90C vs FQAF5N90
FQPF6N90CT
N-Channel QFET® MOSFET 900V, 6A, 2.3Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL
Fairchild Semiconductor Corporation
FQPF6N90C vs FQPF6N90CT
Part Number
Description
Manufacturer
Compare
FQPF6N90C_NL
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
Fairchild Semiconductor Corporation
FQPF6N90C vs FQPF6N90C_NL
FQPF6N90CT
N-Channel QFET® MOSFET 900V, 6A, 2.3Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL
Fairchild Semiconductor Corporation
FQPF6N90C vs FQPF6N90CT
IRFMG50UPBF
Power Field-Effect Transistor, 5.6A I(D), 1000V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Infineon Technologies AG
FQPF6N90C vs IRFMG50UPBF