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FQT4N20L by:

Power Field-Effect Transistor

Part Details for FQT4N20L by onsemi

Overview of FQT4N20L by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for FQT4N20L

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FQT4N20L Part Data Attributes

FQT4N20L onsemi
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FQT4N20L onsemi Power Field-Effect Transistor
Part Life Cycle Code Active
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 52 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.85 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.2 W
Pulsed Drain Current-Max (IDM) 3.4 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 130 ns
Turn-on Time-Max (ton) 175 ns

Alternate Parts for FQT4N20L

This table gives cross-reference parts and alternative options found for FQT4N20L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT4N20L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQT4N20LTF Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, 4000-REEL onsemi FQT4N20L vs FQT4N20LTF
FQT4N20L Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20L
Part Number Description Manufacturer Compare
FQT4N20D84Z Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20D84Z
FQT4N20S62Z Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20S62Z
FQT4N20LS62Z Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20LS62Z
FQT4N20LTF_NL Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20LTF_NL
FQT4N20L99Z Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20L99Z
FQT4N20LTF Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223, 4000-REEL onsemi FQT4N20L vs FQT4N20LTF
IRFM210AL99Z Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FQT4N20L vs IRFM210AL99Z
FQT4N20L Power Field-Effect Transistor, 0.85A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation FQT4N20L vs FQT4N20L
IRFM210AS62Z Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FQT4N20L vs IRFM210AS62Z

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