Part Details for FQT7N10L by Fairchild Semiconductor Corporation
Overview of FQT7N10L by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQT7N10L
Part # | Distributor | Description | Stock | Price | Buy | |
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Sense Electronic Company Limited | SOT223 | 3173 |
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RFQ | |
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Win Source Electronics | 100V LOGIC N-Channel MOSFET | 278815 |
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$0.3770 / $0.5660 | Buy Now |
Part Details for FQT7N10L
FQT7N10L CAD Models
FQT7N10L Part Data Attributes:
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FQT7N10L
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQT7N10L
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 50 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1.7 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 6.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQT7N10L
This table gives cross-reference parts and alternative options found for FQT7N10L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT7N10L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQT7N10LTF_NL | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LTF_NL |
FQT7N10TF | Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223, 4000-REEL | onsemi | FQT7N10L vs FQT7N10TF |
FQT7N10LL99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LL99Z |
FQT7N10 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10 |
FQT7N10LTF | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LTF |
FQT7N10 | Power Field-Effect Transistor | onsemi | FQT7N10L vs FQT7N10 |
FQT7N10LS62Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10LS62Z |
FQT7N10L | Power Field-Effect Transistor | onsemi | FQT7N10L vs FQT7N10L |
FQT7N10L99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10L vs FQT7N10L99Z |