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Part Details for FQT7N10LTF by onsemi
Overview of FQT7N10LTF by onsemi
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQT7N10LTF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
15R3448
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Newark | N Channel Mosfet, 100V, 1.7A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQT7N10LTF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5641 |
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$0.3160 / $0.7380 | Buy Now |
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DISTI #
87X8794
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Newark | Mosfet, N Ch, 100V, 1.7A, Sot-223, Transistor Polarity:N Channel, Continuous Drain Current Id:1.7A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.275Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Onsemi FQT7N10LTF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5109 |
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$0.3160 / $0.7380 | Buy Now |
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DISTI #
25AC9607
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Newark | Qf 100V 350Mohm L Sot223 Rohs Compliant: Yes |Onsemi FQT7N10LTF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2670 / $0.2720 | Buy Now |
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DISTI #
82C4378
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Newark | N Channel Mosfet, 100V, 1.7A, Sot-223, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:1.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2W Rohs Compliant: Yes |Onsemi FQT7N10LTF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2500 / $0.2640 | Buy Now |
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DISTI #
FQT7N10LTFCT-ND
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DigiKey | MOSFET N-CH 100V 1.7A SOT223-4 Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4003 In Stock |
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$0.2347 / $0.7100 | Buy Now |
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DISTI #
FQT7N10LTF
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Avnet Americas | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT7N10LTF) RoHS: Compliant Container: Reel | 0 |
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RFQ | |
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DISTI #
FQT7N10LTF
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Avnet Americas | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT7N10LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.2516 / $0.2817 | Buy Now |
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DISTI #
FQT7N10LTF
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Avnet Americas | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT7N10LTF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.2516 / $0.2817 | Buy Now |
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DISTI #
15R3448
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Avnet Americas | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 15R3448) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 53 Weeks, 6 Days Container: Ammo Pack | 7023 Partner Stock |
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$0.4070 / $0.7380 | Buy Now |
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DISTI #
512-FQT7N10LTF
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Mouser Electronics | MOSFET 100V Single RoHS: Compliant | 533 |
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$0.2340 / $0.7100 | Buy Now |
Part Details for FQT7N10LTF
FQT7N10LTF CAD Models
FQT7N10LTF Part Data Attributes:
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FQT7N10LTF
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT7N10LTF
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223, 4000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 318H-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 54 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 6.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQT7N10LTF
This table gives cross-reference parts and alternative options found for FQT7N10LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT7N10LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQT7N10LTF_NL | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10LTF_NL |
| FQT7N10L | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10L |
| FQT7N10TF | Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223, 4000-REEL | onsemi | FQT7N10LTF vs FQT7N10TF |
| FQT7N10LL99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10LL99Z |
| FQT7N10 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10 |
| FQT7N10LTF | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10LTF |
| FQT7N10 | Power Field-Effect Transistor | onsemi | FQT7N10LTF vs FQT7N10 |
| FQT7N10LS62Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10LS62Z |
| FQT7N10L | Power Field-Effect Transistor | onsemi | FQT7N10LTF vs FQT7N10L |
| FQT7N10L99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF vs FQT7N10L99Z |