Part Details for FQT7N10LTF_NL by Fairchild Semiconductor Corporation
Overview of FQT7N10LTF_NL by Fairchild Semiconductor Corporation
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Energy and Power Systems
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Part Details for FQT7N10LTF_NL
FQT7N10LTF_NL CAD Models
FQT7N10LTF_NL Part Data Attributes
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FQT7N10LTF_NL
Fairchild Semiconductor Corporation
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FQT7N10LTF_NL
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQT7N10LTF_NL
This table gives cross-reference parts and alternative options found for FQT7N10LTF_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT7N10LTF_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQT7N10 | Power Field-Effect Transistor | onsemi | FQT7N10LTF_NL vs FQT7N10 |
| FQT7N10 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | FQT7N10LTF_NL vs FQT7N10 |
| FQT7N10LS62Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF_NL vs FQT7N10LS62Z |
| FQT7N10LL99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF_NL vs FQT7N10LL99Z |
| FQT7N10L99Z | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FQT7N10LTF_NL vs FQT7N10L99Z |
| FQT7N10LTF | 1.7A, 100V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET | Rochester Electronics LLC | FQT7N10LTF_NL vs FQT7N10LTF |
| FQT7N10L | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fairchild Semiconductor Corporation | FQT7N10LTF_NL vs FQT7N10L |
| FQT7N10TF | Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223, 4000-REEL | onsemi | FQT7N10LTF_NL vs FQT7N10TF |
| FQT7N10L | Power Field-Effect Transistor | onsemi | FQT7N10LTF_NL vs FQT7N10L |