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Part Details for FQU2N100TU by onsemi
Results Overview of FQU2N100TU by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQU2N100TU Information
FQU2N100TU by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQU2N100TU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQU2N100TU
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TME | Transistor: N-MOSFET, unipolar, 1000V, 1A, 50W, IPAK Min Qty: 1 | 0 |
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$0.7600 / $1.2500 | RFQ |
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Chip Stock | PowerMosfet,N-channel,Qfet®,1000V,1.6A,9Ω,Ipak | 28105 |
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RFQ |
Part Details for FQU2N100TU
FQU2N100TU CAD Models
FQU2N100TU Part Data Attributes
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FQU2N100TU
onsemi
Buy Now
Datasheet
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Compare Parts:
FQU2N100TU
onsemi
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, IPAK, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | IPAK-3 / DPAK-3 STRAIGHT LEAD | |
| Manufacturer Package Code | 369AR | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 160 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 1.6 A | |
| Drain-source On Resistance-Max | 9 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 6.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for FQU2N100TU
This table gives cross-reference parts and alternative options found for FQU2N100TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU2N100TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQU2N100TU | Rochester Electronics LLC | Check for Price | 1.6A, 1000V, 9ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, IPAK-3 | FQU2N100TU vs FQU2N100TU |
FQU2N100TU Frequently Asked Questions (FAQ)
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The maximum junction temperature for the FQU2N100TU is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a pull-down resistor (e.g., 10 kΩ) from the gate to ground. This helps to prevent unwanted turn-on and ensures stable operation.
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The recommended gate drive voltage for the FQU2N100TU is between 10 V and 15 V. This ensures reliable turn-on and minimizes switching losses.
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Use a voltage clamp or a transient voltage suppressor (TVS) to protect the FQU2N100TU from overvoltage. For overcurrent protection, consider adding a current sense resistor and a fuse or a current limiter in the circuit.
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The thermal resistance of the FQU2N100TU package is typically around 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) in still air. However, this can vary depending on the specific application and cooling conditions.