Part Details for FQU5N20 by Fairchild Semiconductor Corporation
Overview of FQU5N20 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQU5N20
FQU5N20 CAD Models
FQU5N20 Part Data Attributes
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FQU5N20
Fairchild Semiconductor Corporation
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Datasheet
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FQU5N20
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-251 | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37 W | |
| Pulsed Drain Current-Max (IDM) | 15.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQU5N20
This table gives cross-reference parts and alternative options found for FQU5N20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU5N20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP120TA | Power Field-Effect Transistor, 0.25A I(D), 200V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | FQU5N20 vs BSP120TA |
| FQD4N20LTF | Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQU5N20 vs FQD4N20LTF |
| 2SK2235 | TRANSISTOR 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | FQU5N20 vs 2SK2235 |
| 2SK2046 | Power Field-Effect Transistor, 12A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN | SANYO Electric Co Ltd | FQU5N20 vs 2SK2046 |
| BSP297 | Power Field-Effect Transistor, 0.6A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | FQU5N20 vs BSP297 |
| 2SK1335(S)TL | Power Field-Effect Transistor, 3A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | FQU5N20 vs 2SK1335(S)TL |
| H5N2004DS-E | 8A, 200V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | Renesas Electronics Corporation | FQU5N20 vs H5N2004DS-E |
| IRFR211 | Power Field-Effect Transistor, 2.7A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | FQU5N20 vs IRFR211 |
| 2SK215 | Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Hitachi Ltd | FQU5N20 vs 2SK215 |
| FQD10N20L | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQU5N20 vs FQD10N20L |