Datasheets
FS45MR12W1M1B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for FS45MR12W1M1B11BOMA1 by Infineon Technologies AG

Overview of FS45MR12W1M1B11BOMA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FS45MR12W1M1B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # FS45MR12W1M1B11BOMA1-ND
DigiKey SIC 6N-CH 1200V AG-EASY1BM-2 Min Qty: 1 Lead time: 78 Weeks Container: Tray 106
In Stock
  • 1 $144.6700
  • 24 $133.9146
  • 48 $129.0271
$129.0271 / $144.6700 Buy Now
Rochester Electronics FS45MR12W1M1_B11 - Low Power Easy RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 8
  • 1 $122.7400
  • 25 $120.2800
  • 100 $115.3700
  • 500 $110.4600
  • 1,000 $104.3300
$104.3300 / $122.7400 Buy Now
Ameya Holding Limited   122
RFQ

Part Details for FS45MR12W1M1B11BOMA1

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FS45MR12W1M1B11BOMA1 Part Data Attributes

FS45MR12W1M1B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
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FS45MR12W1M1B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 60 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Gate-Emitter Thr Voltage-Max 20 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-Channel
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 55300 ns
Turn-on Time-Nom (ton) 14100 ns
VCEsat-Max 5.55 V

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