Datasheets
FS50UM-2 by:

Power Field-Effect Transistor, 50A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for FS50UM-2 by Powerex Power Semiconductors

Overview of FS50UM-2 by Powerex Power Semiconductors

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for FS50UM-2

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FS50UM-2 Part Data Attributes

FS50UM-2 Powerex Power Semiconductors
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FS50UM-2 Powerex Power Semiconductors Power Field-Effect Transistor, 50A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer POWEREX INC
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 70 W
Power Dissipation-Max (Abs) 70 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FS50UM-2

This table gives cross-reference parts and alternative options found for FS50UM-2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS50UM-2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FS50UM-2 Power Field-Effect Transistor, 50A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Mitsubishi Electric FS50UM-2 vs FS50UM-2
Part Number Description Manufacturer Compare
HUF75631P3 Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation FS50UM-2 vs HUF75631P3
FS50UM-2 Power Field-Effect Transistor, 50A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Mitsubishi Electric FS50UM-2 vs FS50UM-2
IRFPE30PBF Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 International Rectifier FS50UM-2 vs IRFPE30PBF
HUF75631P3 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation FS50UM-2 vs HUF75631P3
FS50UM-2 50A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Renesas Electronics Corporation FS50UM-2 vs FS50UM-2
IRFPE30 Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier FS50UM-2 vs IRFPE30
HUF75631P3_NL Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation FS50UM-2 vs HUF75631P3_NL

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