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Insulated Gate Bipolar Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8842
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Newark | Igbt Module, Aec-Qq101, 6 N-Ch, 750V, 450A Rohs Compliant: Yes |Infineon FS820R08A6P2BBPSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 5 |
|
$534.8500 / $544.8500 | Buy Now |
DISTI #
448-FS820R08A6P2BBPSA1-ND
|
DigiKey | IGBT MODULE PACK DRV HYBRIDD-1 Min Qty: 1 Lead time: 39 Weeks Container: Tray |
15 In Stock |
|
$504.1917 / $523.8900 | Buy Now |
DISTI #
FS820R08A6P2BBPSA1
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Avnet Americas | Trans IGBT Module N-CH 750V 820A - Trays (Alt: FS820R08A6P2BBPSA1) RoHS: Not Compliant Min Qty: 6 Package Multiple: 1 Lead time: 39 Weeks, 0 Days Container: Tray | 6 |
|
$604.5000 | Buy Now |
DISTI #
726-FS820R08A6P2BBP1
|
Mouser Electronics | IGBT Modules HYBRID PACK DRIVE RoHS: Compliant | 17 |
|
$504.7800 / $518.9600 | Buy Now |
|
Future Electronics | FS820 Series 750 V HybridPACK Drive Module RoHS: Compliant pbFree: Yes Min Qty: 6 Package Multiple: 6 Lead time: 39 Weeks Container: Tray | 0Tray |
|
$510.1900 | Buy Now |
|
Rochester Electronics | FS820R08A6P2B - Hybrid Pack Drive RoHS: Compliant Status: Active Min Qty: 1 | 1 |
|
$483.4400 / $568.7500 | Buy Now |
|
Ameya Holding Limited | Min Qty: 1 | 10 |
|
$585.5181 / $622.2943 | Buy Now |
DISTI #
SP001499708
|
EBV Elektronik | Trans IGBT Module N-CH 750V 820A (Alt: SP001499708) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 40 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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FS820R08A6P2BBPSA1
Infineon Technologies AG
Buy Now
Datasheet
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FS820R08A6P2BBPSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 820 A | |
Collector-Emitter Voltage-Max | 750 V | |
Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X33 | |
Number of Elements | 6 | |
Number of Terminals | 33 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 714 W | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1110 ns | |
Turn-on Time-Nom (ton) | 380 ns | |
VCEsat-Max | 1.35 V |