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Part Details for FW297-TL-2W by onsemi
Overview of FW297-TL-2W by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for FW297-TL-2W
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
28X7726
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Newark | Nch+Nch 4.5A 60V 4V Drive/Reel |Onsemi FW297-TL-2W RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2980 / $0.3980 | Buy Now |
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DISTI #
FW297-TL-2W
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Avnet Americas | NCH+NCH 4.5A 60V 4V DRIVE - Tape and Reel (Alt: FW297-TL-2W) RoHS: Compliant Min Qty: 1083 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 32500 Partner Stock |
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$0.2864 / $0.3419 | Buy Now |
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Rochester Electronics | FW297 - Dual N-Channel Power MOSFET 60 V, 58 m, 4.5 A, RoHS: Compliant pbFree: No Status: Obsolete Min Qty: 1 | 32500 |
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$0.2864 / $0.3369 | Buy Now |
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|
Flip Electronics | Stock, ship today | 1778 |
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RFQ |
Part Details for FW297-TL-2W
FW297-TL-2W CAD Models
FW297-TL-2W Part Data Attributes
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FW297-TL-2W
onsemi
Buy Now
Datasheet
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Compare Parts:
FW297-TL-2W
onsemi
Dual N-Channel Power MOSFET 60 V, 58 mΩ, 4.5 A,, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SC-87, SOT-96, SOIC-8 | |
| Manufacturer Package Code | 751CR | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | ESD PROTECTED | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.2 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |