Datasheets
FZ800R33KF2C by:

Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel, MODULE-7

Part Details for FZ800R33KF2C by Infineon Technologies AG

Overview of FZ800R33KF2C by Infineon Technologies AG

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Part Details for FZ800R33KF2C

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FZ800R33KF2C Part Data Attributes

FZ800R33KF2C Infineon Technologies AG
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FZ800R33KF2C Infineon Technologies AG Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel, MODULE-7
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 1300 A
Collector-Emitter Voltage-Max 3300 V
Configuration PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 9600 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1900 ns
Turn-on Time-Nom (ton) 480 ns
VCEsat-Max 4.25 V

Alternate Parts for FZ800R33KF2C

This table gives cross-reference parts and alternative options found for FZ800R33KF2C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ800R33KF2C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FZ800R33KF2CNOSA1 Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FZ800R33KF2C vs FZ800R33KF2CNOSA1
Part Number Description Manufacturer Compare
FZ800R33KF2CNOSA1 Insulated Gate Bipolar Transistor, 1300A I(C), 3300V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FZ800R33KF2C vs FZ800R33KF2CNOSA1
FZ1000R33HE3BOSA1 Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG FZ800R33KF2C vs FZ1000R33HE3BOSA1

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