There are no models available for this part yet.
Overview of H7N0310LD-E by Renesas Electronics Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
H7N0310LD-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 30A 10Mohm LDPAK(L)/To-262 |
CAD Models for H7N0310LD-E by Renesas Electronics Corporation
Part Data Attributes for H7N0310LD-E by Renesas Electronics Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
RENESAS ELECTRONICS CORP
|
Part Package Code
|
LDPAK(L)
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Pin Count
|
4
|
Manufacturer Package Code
|
PRSS0004AE
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Renesas Electronics
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
30 A
|
Drain-source On Resistance-Max
|
0.019 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSIP-T3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
50 W
|
Pulsed Drain Current-Max (IDM)
|
120 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for H7N0310LD-E
This table gives cross-reference parts and alternative options found for H7N0310LD-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of H7N0310LD-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2SK2957L | 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | H7N0310LD-E vs 2SK2957L |
2SK2807-01L | Power Field-Effect Transistor, 35A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TPAK-3 | Fuji Electric Co Ltd | H7N0310LD-E vs 2SK2807-01L |
2SK2957L-E | 50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | H7N0310LD-E vs 2SK2957L-E |
2SK3296-S | 35A, 20V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | Renesas Electronics Corporation | H7N0310LD-E vs 2SK3296-S |
2SK2957(L) | Power Field-Effect Transistor, 50A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | H7N0310LD-E vs 2SK2957(L) |
H7N0310LD | 30A, 30V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | H7N0310LD-E vs H7N0310LD |
2SK3295-S | 35A, 20V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, 3 PIN | Renesas Electronics Corporation | H7N0310LD-E vs 2SK3295-S |
H7N0311LD | 45A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Renesas Electronics Corporation | H7N0310LD-E vs H7N0311LD |
2SK3296-S | Power Field-Effect Transistor, 35A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | NEC Electronics Group | H7N0310LD-E vs 2SK3296-S |