Datasheets
HAT1026R by:

7A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8

Part Details for HAT1026R by Renesas Electronics Corporation

Overview of HAT1026R by Renesas Electronics Corporation

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Applications Automotive

Part Details for HAT1026R

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HAT1026R Part Data Attributes

HAT1026R Renesas Electronics Corporation
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HAT1026R Renesas Electronics Corporation 7A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HAT1026R

This table gives cross-reference parts and alternative options found for HAT1026R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT1026R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PHN210T TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power NXP Semiconductors HAT1026R vs PHN210T
FDS8947A Power Field-Effect Transistor, 4A I(D), 30V, 0.052ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation HAT1026R vs FDS8947A
HUF76105DK8 Power Field-Effect Transistor, 5A I(D), 30V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA Harris Semiconductor HAT1026R vs HUF76105DK8
F5H3ND Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd HAT1026R vs F5H3ND
NDS9956AD84Z Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation HAT1026R vs NDS9956AD84Z
IRF7706PBF Power Field-Effect Transistor, 7A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8 International Rectifier HAT1026R vs IRF7706PBF
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG HAT1026R vs BSO305N
NDS9953A Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation HAT1026R vs NDS9953A
HAT1036R 12A, 30V, 0.034ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 Renesas Electronics Corporation HAT1026R vs HAT1036R
NDS9956A_NL Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOIC-8 Fairchild Semiconductor Corporation HAT1026R vs NDS9956A_NL

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