Part Details for HAT2287WP-EL-E by Renesas Electronics Corporation
Overview of HAT2287WP-EL-E by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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HAT2287WP-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 200V 17A 94Mohm Wpak |
Price & Stock for HAT2287WP-EL-E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
HAT2287WP-EL-E-ND
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DigiKey | MOSFET N-CH 200V 17A 8WPAK Lead time: 30 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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Buy Now |
Part Details for HAT2287WP-EL-E
HAT2287WP-EL-E CAD Models
HAT2287WP-EL-E Part Data Attributes
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HAT2287WP-EL-E
Renesas Electronics Corporation
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Datasheet
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HAT2287WP-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 200V 17A 94Mohm Wpak, WPAK, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | WPAK | |
Package Description | SMALL OUTLINE, R-PDSO-N8 | |
Pin Count | 8 | |
Manufacturer Package Code | PWSN0008DA | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Renesas Electronics | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.094 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 30 W | |
Pulsed Drain Current-Max (IDM) | 34 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |