Part Details for HB52E648EN-B6B by Hitachi Ltd
Overview of HB52E648EN-B6B by Hitachi Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Industrial Automation
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Part Details for HB52E648EN-B6B
HB52E648EN-B6B CAD Models
HB52E648EN-B6B Part Data Attributes
|
|
HB52E648EN-B6B
Hitachi Ltd
Buy Now
Datasheet
|
Compare Parts:
HB52E648EN-B6B
Hitachi Ltd
Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HITACHI LTD | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM168 | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 65 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM168 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.036 A | |
| Supply Current-Max | 2.25 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for HB52E648EN-B6B
This table gives cross-reference parts and alternative options found for HB52E648EN-B6B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HB52E648EN-B6B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W3DG6463V10D2-SG | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Microsemi Corporation | HB52E648EN-B6B vs W3DG6463V10D2-SG |
| HYS64V64220GU-7.5-D | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Infineon Technologies AG | HB52E648EN-B6B vs HYS64V64220GU-7.5-D |
| HB52E648EN-B6B | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Elpida Memory Inc | HB52E648EN-B6B vs HB52E648EN-B6B |
| HYM72V64636BLT8-K | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | HB52E648EN-B6B vs HYM72V64636BLT8-K |
| WED3DG6466V75D2 | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Microsemi Corporation | HB52E648EN-B6B vs WED3DG6466V75D2 |
| M366S6453AT0-C80 | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | HB52E648EN-B6B vs M366S6453AT0-C80 |
| M366S6453CTS-L1L | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | HB52E648EN-B6B vs M366S6453CTS-L1L |
| M366S6453CTS-L7A | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Samsung Semiconductor | HB52E648EN-B6B vs M366S6453CTS-L7A |
| NT512S64V8HA0G-8B | Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168 | Nanya Technology Corporation | HB52E648EN-B6B vs NT512S64V8HA0G-8B |
| WED3DG6366V7D2 | Synchronous DRAM Module, 64MX64, 5.4ns, CMOS, DIMM-168 | Microsemi Corporation | HB52E648EN-B6B vs WED3DG6366V7D2 |