Part Details for HF50-12S by Advanced Semiconductor Inc
Overview of HF50-12S by Advanced Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Entertainment and Gaming
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
TCR1HF50B | Toshiba Electronic Devices & Storage Corporation | LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV) | |
ISL71090SEHF50/PROTO | Renesas Electronics Corporation | Radiation Hardened Ultra Low Noise, Precision Voltage Reference | |
10106268-6003A01LF | Amphenol Communications Solutions | PwrBlade+®,Power Connectors, Vertical, Receptacle, 12S 6HDP |
Part Details for HF50-12S
HF50-12S CAD Models
HF50-12S Part Data Attributes
|
HF50-12S
Advanced Semiconductor Inc
Buy Now
Datasheet
|
Compare Parts:
HF50-12S
Advanced Semiconductor Inc
RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
Package Description | POST/STUD MOUNT, O-CRPM-F4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | EMITTER | |
Collector Current-Max (IC) | 12 A | |
Collector-Base Capacitance-Max | 300 pF | |
Collector-Emitter Voltage-Max | 18 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
Highest Frequency Band | HIGH FREQUENCY BAND | |
JESD-30 Code | O-CRPM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 183 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |