There are no models available for this part yet.
Overview of HGT1S12N60A4DS by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 2 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for HGT1S12N60A4DS by Fairchild Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
2156-HGT1S12N60A4DS-ND
|
DigiKey | IGBT, 54A, 600V, N-CHANNEL, TO-2 Min Qty: 81 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2308 In Stock |
|
$3.7100 | Buy Now | |
| Onlinecomponents.com | Trans IGBT Chip N-CH 600V 54A 3-Pin(2+Tab) TO-263AB Rail RoHS: Compliant |
147 In Stock |
|
$2.3400 / $7.7000 | Buy Now | ||
| Rochester Electronics | Insulated Gate Bipolar Transistor, 54A, 600V, N-Channel, TO-263AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 87 |
|
$3.1900 / $3.7500 | Buy Now |
CAD Models for HGT1S12N60A4DS by Fairchild Semiconductor Corporation
Part Data Attributes for HGT1S12N60A4DS by Fairchild Semiconductor Corporation
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
Part Package Code
|
D2PAK
|
|
Pin Count
|
2
|
|
Manufacturer Package Code
|
2LD,TO263, SURFACE MOUNT
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Additional Feature
|
LOW CONDUCTION LOSS
|
|
Case Connection
|
COLLECTOR
|
|
Collector Current-Max (IC)
|
54 A
|
|
Collector-Emitter Voltage-Max
|
600 V
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
Fall Time-Max (tf)
|
95 ns
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JEDEC-95 Code
|
TO-263AB
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
167 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
POWER CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Nom (toff)
|
180 ns
|
|
Turn-on Time-Nom (ton)
|
33 ns
|
Alternate Parts for HGT1S12N60A4DS
This table gives cross-reference parts and alternative options found for HGT1S12N60A4DS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60A4DS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S12N60A4DS9A | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Fairchild Semiconductor Corporation | HGT1S12N60A4DS vs HGT1S12N60A4DS9A |
| HGT1S12N60A4DS9A | 54A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGT1S12N60A4DS vs HGT1S12N60A4DS9A |