HGT1S12N60A4DS
Description: 54A, 600V, N-CHANNEL IGBT, TO-263AB

Overview of HGT1S12N60A4DS by Rochester Electronics LLC

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for HGT1S12N60A4DS by Rochester Electronics LLC

HGT1S12N60A4DS
Rochester Electronics LLC
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
unknown
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
54 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
180 ns
Turn-on Time-Nom (ton)
33 ns
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  1. HGT1S12N60A4DS
    Rochester Electronics LLC
    54A, 600V, N-CHANNEL IGBT, TO-263AB
    VS

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