Transistors
HGT1S12N60A4DS_NL
Fairchild Semiconductor Corporation
Description: Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE PACKAGE-3

Overview of HGT1S12N60A4DS_NL by Fairchild Semiconductor Corporation

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for HGT1S12N60A4DS_NL by Fairchild Semiconductor Corporation

HGT1S12N60A4DS_NL
Fairchild Semiconductor Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
54 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
180 ns
Turn-on Time-Nom (ton)
33 ns
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  1. HGT1S12N60A4DS_NL
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE PACKAGE-3
    VS

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