HGT1S5N120BNS9A
Description: Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

Overview of HGT1S5N120BNS9A by Fairchild Semiconductor Corporation

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Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

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Part Data Attributes for HGT1S5N120BNS9A by Fairchild Semiconductor Corporation

HGT1S5N120BNS9A
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS, AVALANCHE RATED
Case Connection
COLLECTOR
Collector Current-Max (IC)
21 A
Collector-Emitter Voltage-Max
1200 V
Configuration
SINGLE
Fall Time-Max (tf)
200 ns
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
167 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
20 ns
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
357 ns
Turn-on Time-Nom (ton)
35 ns
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  1. HGT1S5N120BNS9A
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
    VS

Alternate Parts for HGT1S5N120BNS9A

This table gives cross-reference parts and alternative options found for HGT1S5N120BNS9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S5N120BNS9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGT1S5N120BNS 21A, 1200V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGT1S5N120BNS9A vs HGT1S5N120BNS
Part Number Description Manufacturer Compare
APT35GN120SG Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc HGT1S5N120BNS9A vs APT35GN120SG
IRGBC40U Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGT1S5N120BNS9A vs IRGBC40U
IXGH22N50B Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGT1S5N120BNS9A vs IXGH22N50B
HGTP12N60D1 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGT1S5N120BNS9A vs HGTP12N60D1
HGTG30N60C3 Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGT1S5N120BNS9A vs HGTG30N60C3
HGTP12N60A4 Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN Fairchild Semiconductor Corporation HGT1S5N120BNS9A vs HGTP12N60A4
IRG4IBC10UDPBF Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 Infineon Technologies AG HGT1S5N120BNS9A vs IRG4IBC10UDPBF
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGT1S5N120BNS9A vs IXGH17N100
APT30GT60BRD Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Advanced Power Technology HGT1S5N120BNS9A vs APT30GT60BRD
IRG4BC30SPBF Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG HGT1S5N120BNS9A vs IRG4BC30SPBF

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