There are no models available for this part yet.
Overview of HGTD10N40F1S by Harris Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for HGTD10N40F1S by Harris Semiconductor
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
2156-HGTD10N40F1S-ND
|
DigiKey | 10A, 400V N-CHANNEL IGBT Min Qty: 329 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1045 In Stock |
|
$0.9100 | Buy Now | |
Rochester Electronics | 10A, 400V N-Channel IGBT ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1045 |
|
$0.7833 / $0.9215 | Buy Now |
CAD Models for HGTD10N40F1S by Harris Semiconductor
Part Data Attributes for HGTD10N40F1S by Harris Semiconductor
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
HARRIS SEMICONDUCTOR
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
12 A
|
Collector-Emitter Voltage-Max
|
400 V
|
Configuration
|
SINGLE
|
Gate-Emitter Thr Voltage-Max
|
4.5 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JEDEC-95 Code
|
TO-252AA
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
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Power Dissipation Ambient-Max
|
75 W
|
Power Dissipation-Max (Abs)
|
75 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
POWER CONTROL
|
Transistor Element Material
|
SILICON
|
VCEsat-Max
|
2.2 V
|