Part Details for HGTD10N40F1S9A by Harris Semiconductor
Overview of HGTD10N40F1S9A by Harris Semiconductor
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Part Details for HGTD10N40F1S9A
HGTD10N40F1S9A CAD Models
HGTD10N40F1S9A Part Data Attributes
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HGTD10N40F1S9A
Harris Semiconductor
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HGTD10N40F1S9A
Harris Semiconductor
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 12 A | |
Collector-Emitter Voltage-Max | 400 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 4.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 75 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 130 ns | |
Turn-on Time-Nom (ton) | 45 ns | |
VCEsat-Max | 2.2 V |