HGTD10N40F1S9A
Description: 12A, 400V, N-CHANNEL IGBT, TO-252AA

Overview of HGTD10N40F1S9A by Intersil Corporation

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  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for HGTD10N40F1S9A by Intersil Corporation
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Part Data Attributes for HGTD10N40F1S9A by Intersil Corporation

HGTD10N40F1S9A
Intersil Corporation
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
COLLECTOR
Collector Current-Max (IC)
12 A
Collector-Emitter Voltage-Max
400 V
Configuration
SINGLE
Gate-Emitter Thr Voltage-Max
4.5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
130 ns
Turn-on Time-Nom (ton)
45 ns
VCEsat-Max
2.2 V
Want to compare parts?
  1. HGTD10N40F1S9A
    Intersil Corporation
    12A, 400V, N-CHANNEL IGBT, TO-252AA
    VS

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