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Overview of HGTD10N40F1S9A by Intersil Corporation
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- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for HGTD10N40F1S9A by Intersil Corporation
Part Data Attributes for HGTD10N40F1S9A by Intersil Corporation
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|
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
|
HARRIS SEMICONDUCTOR
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Package Description
|
SMALL OUTLINE, R-PSSO-G2
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Reach Compliance Code
|
unknown
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ECCN Code
|
EAR99
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HTS Code
|
8541.29.00.95
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Case Connection
|
COLLECTOR
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Collector Current-Max (IC)
|
12 A
|
Collector-Emitter Voltage-Max
|
400 V
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Configuration
|
SINGLE
|
Gate-Emitter Thr Voltage-Max
|
4.5 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JEDEC-95 Code
|
TO-252AA
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JESD-30 Code
|
R-PSSO-G2
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Number of Elements
|
1
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Number of Terminals
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2
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
|
75 W
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
|
GULL WING
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Terminal Position
|
SINGLE
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Transistor Application
|
POWER CONTROL
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Transistor Element Material
|
SILICON
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Turn-off Time-Nom (toff)
|
130 ns
|
Turn-on Time-Nom (ton)
|
45 ns
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VCEsat-Max
|
2.2 V
|