Datasheets
HGTD3N60C3S by:

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA

Part Details for HGTD3N60C3S by Fairchild Semiconductor Corporation

Overview of HGTD3N60C3S by Fairchild Semiconductor Corporation

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Applications Automotive

Part Details for HGTD3N60C3S

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HGTD3N60C3S Part Data Attributes

HGTD3N60C3S Fairchild Semiconductor Corporation
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HGTD3N60C3S Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 33 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 455 ns
Turn-on Time-Nom (ton) 15 ns

Alternate Parts for HGTD3N60C3S

This table gives cross-reference parts and alternative options found for HGTD3N60C3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD3N60C3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTD3N60C3S9A Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, Fairchild Semiconductor Corporation HGTD3N60C3S vs HGTD3N60C3S9A
HGTD3N60C3S 6A, 600V, N-CHANNEL IGBT, TO-252AA, TO-252AA, 3 PIN Intersil Corporation HGTD3N60C3S vs HGTD3N60C3S
Part Number Description Manufacturer Compare
SGD04N60BUMA1 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG HGTD3N60C3S vs SGD04N60BUMA1
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG HGTD3N60C3S vs IRG4RC10KTRRPBF
SGR2N60UF Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation HGTD3N60C3S vs SGR2N60UF
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG HGTD3N60C3S vs IRG4RC10KTRLPBF
HGTD3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation HGTD3N60C3S vs HGTD3N60B3S
IRG4RC10KPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier HGTD3N60C3S vs IRG4RC10KPBF
HGTD3N60B3 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC PACKAGE-3 Harris Semiconductor HGTD3N60C3S vs HGTD3N60B3
IRG4RC10K Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier HGTD3N60C3S vs IRG4RC10K
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier HGTD3N60C3S vs IRG4RC10KTRL
HGTD3N60C3S9A Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA, Fairchild Semiconductor Corporation HGTD3N60C3S vs HGTD3N60C3S9A

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