Datasheets
HGTG11N120CND by:

1200V, NPT IGBT, 450-TUBE

Part Details for HGTG11N120CND by onsemi

Overview of HGTG11N120CND by onsemi

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Price & Stock for HGTG11N120CND

Part # Distributor Description Stock Price Buy
DISTI # 58K8900
Newark Single Igbt, 1.2Kv, 43A, Continuous Collector Current:43A, Collector Emitter Saturation Voltage:2.1V, Power Dissipation:298W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Onsemi HGTG11N120CND Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 80
  • 1 $4.5700
  • 10 $4.5400
  • 25 $3.9200
  • 50 $3.7800
  • 100 $3.6400
  • 250 $3.5900
  • 900 $3.0500
$3.0500 / $4.5700 Buy Now
DISTI # HGTG11N120CND-ND
DigiKey IGBT NPT 1200V 43A TO247-3 Min Qty: 1 Lead time: 62 Weeks Container: Tube 221
In Stock
  • 1 $5.4800
  • 30 $4.3433
  • 120 $3.7229
  • 510 $3.3092
  • 1,020 $2.8335
  • 2,010 $2.6681
$2.6681 / $5.4800 Buy Now
DISTI # HGTG11N120CND
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.0717
  • 900 $2.9898
  • 1,800 $2.9079
  • 2,700 $2.8260
  • 3,600 $2.7441
$2.7441 / $3.0717 Buy Now
DISTI # 58K8900
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 63 Weeks, 4 Days Container: Bulk 80 Partner Stock
  • 1 $4.9800
  • 10 $4.4700
  • 25 $3.7200
  • 50 $3.5400
  • 100 $3.3800
$3.3800 / $4.9800 Buy Now
DISTI # 512-HGTG11N120CND
Mouser Electronics IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dd RoHS: Compliant 1825
  • 1 $5.2500
  • 10 $4.8800
  • 25 $4.2100
  • 100 $3.7200
  • 250 $3.6700
  • 450 $3.3800
  • 900 $2.8300
  • 2,700 $2.6600
$2.6600 / $5.2500 Buy Now
Rochester Electronics 1200V, NPT IGBT RoHS: Compliant Status: Active Min Qty: 1 277
  • 1 $2.9900
  • 25 $2.9300
  • 100 $2.8100
  • 500 $2.6900
  • 1,000 $2.5400
$2.5400 / $2.9900 Buy Now
DISTI # HGTG11N120CND
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Container: Tube 0
  • 450 $3.0717
  • 900 $2.9898
  • 1,800 $2.9079
  • 2,700 $2.8260
  • 3,600 $2.7441
$2.7441 / $3.0717 Buy Now
DISTI # 58K8900
Avnet Americas Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 63 Weeks, 4 Days Container: Bulk 80 Partner Stock
  • 1 $4.9800
  • 10 $4.4700
  • 25 $3.7200
  • 50 $3.5400
  • 100 $3.3800
$3.3800 / $4.9800 Buy Now
DISTI # HGTG11N120CND
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # HGTG11N120CND
Avnet Silica Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 450 Package Multiple: 30 Lead time: 5 Weeks, 2 Days Silica - 270
Buy Now
DISTI # HGTG11N120CND
EBV Elektronik Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 7 Weeks, 4 Days EBV - 30
Buy Now
DISTI # 1611490
element14 Asia-Pacific DC Collector Current:43A RoHS: Compliant Min Qty: 1 Container: Each 1690
  • 1 $4.5070
  • 10 $3.8325
  • 100 $2.9207
  • 500 $2.8688
  • 1,000 $2.8169
$2.8169 / $4.5070 Buy Now
DISTI # 1611490
Farnell IGBT, N RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 1610
  • 1 $4.7682
  • 10 $3.6264
  • 100 $2.7606
  • 500 $2.7104
  • 1,000 $2.6978
$2.6978 / $4.7682 Buy Now
LCSC 298W 43A 1.2kV NPT() TO-247AC-3 IGBTs ROHS 4496
  • 1 $3.6936
  • 10 $3.1939
  • 30 $2.8970
  • 90 $2.5957
  • 450 $2.4569
  • 900 $2.3958
$2.3958 / $3.6936 Buy Now
New Advantage Corporation TO-247 3L1200V,43A,NPT SERIES NCH, IGBT W/ ANTI-PARALLEL HYPERFAST RoHS: Compliant Min Qty: 1 Package Multiple: 30 210
  • 60 $4.7700
  • 210 $4.4400
$4.4400 / $4.7700 Buy Now
Wuhan P&S 1200V NPT IGBT Min Qty: 1 350
  • 1 $7.1400
  • 100 $4.5600
  • 500 $3.7600
  • 1,000 $3.4600
$3.4600 / $7.1400 Buy Now

Part Details for HGTG11N120CND

HGTG11N120CND CAD Models

HGTG11N120CND Part Data Attributes:

HGTG11N120CND onsemi
Buy Now Datasheet
Compare Parts:
HGTG11N120CND onsemi 1200V, NPT IGBT, 450-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CK
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 64 Weeks, 4 Days
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS
Collector Current-Max (IC) 43 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 570 ns
Turn-on Time-Nom (ton) 33 ns

Alternate Parts for HGTG11N120CND

This table gives cross-reference parts and alternative options found for HGTG11N120CND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG11N120CND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG11N120CND 11A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG11N120CND vs HGTG11N120CND
Part Number Description Manufacturer Compare
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTG11N120CND vs HGTP1N120CN
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc HGTG11N120CND vs IXGH25N100U1
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc HGTG11N120CND vs IXGH36N60A3D4
IRG4BC20W-STRLPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG HGTG11N120CND vs IRG4BC20W-STRLPBF
IXGH35N120B Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG11N120CND vs IXGH35N120B
IXDA20N120AS Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 IXYS Corporation HGTG11N120CND vs IXDA20N120AS
SGW15N120 Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN Infineon Technologies AG HGTG11N120CND vs SGW15N120
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG HGTG11N120CND vs IRG4BC20W-S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation HGTG11N120CND vs APT45GL100BN
IXGH17N100 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG11N120CND vs IXGH17N100

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