Part Details for HGTG20N100D2 by Harris Semiconductor
Overview of HGTG20N100D2 by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for HGTG20N100D2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTG20N100D2-ND
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DigiKey | 34A, 1200V, N-CHANNEL IGBT Min Qty: 33 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
539 In Stock |
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$9.2800 | Buy Now |
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Rochester Electronics | 34A, 1200V, UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL HYPERFAST DIODE RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 539 |
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$7.9600 / $9.3600 | Buy Now |
Part Details for HGTG20N100D2
HGTG20N100D2 CAD Models
HGTG20N100D2 Part Data Attributes
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HGTG20N100D2
Harris Semiconductor
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Datasheet
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HGTG20N100D2
Harris Semiconductor
Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 34 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 680 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 650 ns | |
| Turn-off Time-Nom (toff) | 500 ns | |
| Turn-on Time-Nom (ton) | 100 ns | |
| VCEsat-Max | 3.8 V |
Alternate Parts for HGTG20N100D2
This table gives cross-reference parts and alternative options found for HGTG20N100D2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N100D2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4PC40WPBF | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | HGTG20N100D2 vs IRG4PC40WPBF |
| HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | HGTG20N100D2 vs HGTG30N60C3 |
| IXGH22N50B | Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG20N100D2 vs IXGH22N50B |
| HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | HGTG20N100D2 vs HGTP12N60D1 |
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | Fairchild Semiconductor Corporation | HGTG20N100D2 vs HGTP20N60C3R |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | HGTG20N100D2 vs IRGPC50U |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | HGTG20N100D2 vs HGTD7N60C3S9A |
| IXSX35N120BD1 | Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, PLUS247, 3 PIN | IXYS Corporation | HGTG20N100D2 vs IXSX35N120BD1 |
| IXGH17N100A | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG20N100D2 vs IXGH17N100A |
| IRG4PC30W | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGTG20N100D2 vs IRG4PC30W |