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Transistors IGBTs HGTG20N60A4D

Transistors
HGTG20N60A4D
Description: Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Overview of HGTG20N60A4D by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for HGTG20N60A4D by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
ComSIT USA 600 V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Not Compliant Stock EU - 13
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics IGBT 600V 70A 290W TO247 1847
  • 2 $39.5660
  • 4 $32.4640
  • 5 $31.4500
  • 7 $30.4350
  • 9 $29.4210
  • 12 $26.3770
$26.3770 / $39.5660 Buy Now

CAD Models for HGTG20N60A4D by Fairchild Semiconductor Corporation
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Part Data Attributes for HGTG20N60A4D by Fairchild Semiconductor Corporation
Parametric Data

HGTG20N60A4D
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-247
Package Description
TO-247, 3 PIN
Pin Count
3
Manufacturer Package Code
TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
70 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
73 ns
Gate-Emitter Thr Voltage-Max
7 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
290 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
18 ns
Surface Mount
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
160 ns
Turn-on Time-Nom (ton)
28 ns
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  1. HGTG20N60A4D
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
    VS

Alternate Parts for HGTG20N60A4D

This table gives cross-reference parts and alternative options found for HGTG20N60A4D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N60A4D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGTG20N60A4D 70A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG20N60A4D vs HGTG20N60A4D
HGTG20N60A4D 600V, SMPS IGBT, 450-TUBE onsemi HGTG20N60A4D vs HGTG20N60A4D
Part Number Description Manufacturer Compare
IRG4PH40U Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG20N60A4D vs IRG4PH40U
IRG4BC20KD Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG20N60A4D vs IRG4BC20KD
IRG4BC20FD Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG20N60A4D vs IRG4BC20FD
IRG4PF50W Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG20N60A4D vs IRG4PF50W
IRGP20B120UD-E Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AC, 3 PIN International Rectifier HGTG20N60A4D vs IRGP20B120UD-E
IRG4PC30F Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG20N60A4D vs IRG4PC30F
HGTG7N60A4D Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG20N60A4D vs HGTG7N60A4D
SGL50N60RUFD Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN Fairchild Semiconductor Corporation HGTG20N60A4D vs SGL50N60RUFD
IRG4PC50F Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier HGTG20N60A4D vs IRG4PC50F
IRG4BC20SD Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG20N60A4D vs IRG4BC20SD

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