Transistors
HGTG20N60A4_NL
Fairchild Semiconductor Corporation
Description: Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Overview of HGTG20N60A4_NL by Fairchild Semiconductor Corporation

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Part Data Attributes for HGTG20N60A4_NL by Fairchild Semiconductor Corporation

HGTG20N60A4_NL
Fairchild Semiconductor Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-247
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Case Connection
COLLECTOR
Collector Current-Max (IC)
70 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE
Fall Time-Max (tf)
73 ns
Gate-Emitter Thr Voltage-Max
7 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
290 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
18 ns
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
160 ns
Turn-on Time-Nom (ton)
28 ns
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  1. HGTG20N60A4_NL
    Fairchild Semiconductor Corporation
    Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
    VS

Alternate Parts for HGTG20N60A4_NL

This table gives cross-reference parts and alternative options found for HGTG20N60A4_NL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N60A4_NL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HGTG20N60A4 600V, SMPS IGBT, TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB, 450/RAIL Fairchild Semiconductor Corporation HGTG20N60A4_NL vs HGTG20N60A4
HGTG20N60A4 70A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG20N60A4_NL vs HGTG20N60A4
HGTG20N60A4 IGBT, 600V, SMPS, 450-TUBE onsemi HGTG20N60A4_NL vs HGTG20N60A4
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGTG20N60A4_NL vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc HGTG20N60A4_NL vs IXGH25N100U1
HGTG40N60B3_NL Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation HGTG20N60A4_NL vs HGTG40N60B3_NL
IRG4PC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG HGTG20N60A4_NL vs IRG4PC30FPBF
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier HGTG20N60A4_NL vs IRGPS40B120U
HGTP15N50C1 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor HGTG20N60A4_NL vs HGTP15N50C1
IRG4BC30U-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGTG20N60A4_NL vs IRG4BC30U-SPBF
IXGH32N60B Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG20N60A4_NL vs IXGH32N60B
IRG4BC15UD-SPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG HGTG20N60A4_NL vs IRG4BC15UD-SPBF
HGTP6N50E1D Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTG20N60A4_NL vs HGTP6N50E1D

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