Part Details for HGTG20N60C3R by Harris Semiconductor
Overview of HGTG20N60C3R by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTG20N60C3R
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTG20N60C3R-ND
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DigiKey | 40A, 600V, RUGGED N-CHANNEL IGBT Min Qty: 123 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4575 In Stock |
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$2.4500 | Buy Now |
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Quest Components | IGBT Transistor, N-CHAN, TO-247AC | 10438 |
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$1.5750 / $4.5000 | Buy Now |
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Rochester Electronics | 40A, 600V, RUGGED UFS SERIES N-Channel IGBT ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4575 |
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$2.1100 / $2.4800 | Buy Now |
Part Details for HGTG20N60C3R
HGTG20N60C3R CAD Models
HGTG20N60C3R Part Data Attributes
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HGTG20N60C3R
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
HGTG20N60C3R
Harris Semiconductor
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 400 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 164 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 40 ns | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 390 ns | |
| Turn-on Time-Nom (ton) | 34 ns |
Alternate Parts for HGTG20N60C3R
This table gives cross-reference parts and alternative options found for HGTG20N60C3R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N60C3R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | HGTG20N60C3R vs HGT1S3N60B3S |
| HGTP7N60B3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | HGTG20N60C3R vs HGTP7N60B3 |
| GT10J312 | TRANSISTOR 10 A, 600 V, N-CHANNEL IGBT, 2-10S1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGTG20N60C3R vs GT10J312 |
| IXSH35N100A | Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG20N60C3R vs IXSH35N100A |
| IKA06N60TXKSA1 | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | HGTG20N60C3R vs IKA06N60TXKSA1 |
| IRG4PC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGTG20N60C3R vs IRG4PC50U |
| IRG4PC30KD | Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGTG20N60C3R vs IRG4PC30KD |
| IXGH28N60BD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG20N60C3R vs IXGH28N60BD1 |
| HGTP7N60A4D | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Fairchild Semiconductor Corporation | HGTG20N60C3R vs HGTP7N60A4D |
| SGH40N60UFD | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Samsung Semiconductor | HGTG20N60C3R vs SGH40N60UFD |