Part Details for HGTG30N120CN by Fairchild Semiconductor Corporation
Overview of HGTG30N120CN by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for HGTG30N120CN
HGTG30N120CN CAD Models
HGTG30N120CN Part Data Attributes
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HGTG30N120CN
Fairchild Semiconductor Corporation
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Datasheet
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HGTG30N120CN
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW CONDUCTION LOSS, AVALANCHE RATED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 75 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 400 ns | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 500 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 26 ns | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 610 ns | |
Turn-on Time-Nom (ton) | 43 ns |
Alternate Parts for HGTG30N120CN
This table gives cross-reference parts and alternative options found for HGTG30N120CN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N120CN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | HGTG30N120CN vs SGP13N60UF |
HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | HGTG30N120CN vs HGT1S12N60B3S9A |
SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | HGTG30N120CN vs SGP5N60RUFD |
IXGH38N60 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG30N120CN vs IXGH38N60 |
HGTP1N120CN | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | HGTG30N120CN vs HGTP1N120CN |
IXGH50N60B4 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | HGTG30N120CN vs IXGH50N60B4 |
IRG4BC20FD-SPBF | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | HGTG30N120CN vs IRG4BC20FD-SPBF |
HGT1S3N60C3DS | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Harris Semiconductor | HGTG30N120CN vs HGT1S3N60C3DS |
IRG4PC30UD | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGTG30N120CN vs IRG4PC30UD |
HGTG30N60B3 | IGBT, 600V, PT, 450-TUBE | onsemi | HGTG30N120CN vs HGTG30N60B3 |