Datasheets
HGTG30N120CN by:

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

Part Details for HGTG30N120CN by Fairchild Semiconductor Corporation

Overview of HGTG30N120CN by Fairchild Semiconductor Corporation

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Part Details for HGTG30N120CN

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HGTG30N120CN Part Data Attributes

HGTG30N120CN Fairchild Semiconductor Corporation
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HGTG30N120CN Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Case Connection COLLECTOR
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 400 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Qualification Status Not Qualified
Rise Time-Max (tr) 26 ns
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 43 ns

Alternate Parts for HGTG30N120CN

This table gives cross-reference parts and alternative options found for HGTG30N120CN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG30N120CN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation HGTG30N120CN vs SGP13N60UF
HGT1S12N60B3S9A Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGTG30N120CN vs HGT1S12N60B3S9A
SGP5N60RUFD Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN Samsung Semiconductor HGTG30N120CN vs SGP5N60RUFD
IXGH38N60 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation HGTG30N120CN vs IXGH38N60
HGTP1N120CN Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation HGTG30N120CN vs HGTP1N120CN
IXGH50N60B4 Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN IXYS Corporation HGTG30N120CN vs IXGH50N60B4
IRG4BC20FD-SPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HGTG30N120CN vs IRG4BC20FD-SPBF
HGT1S3N60C3DS Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN Harris Semiconductor HGTG30N120CN vs HGT1S3N60C3DS
IRG4PC30UD Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG HGTG30N120CN vs IRG4PC30UD
HGTG30N60B3 IGBT, 600V, PT, 450-TUBE onsemi HGTG30N120CN vs HGTG30N60B3

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