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Part Details for HGTG5N120BND by onsemi
Results Overview of HGTG5N120BND by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
HGTG5N120BND Information
HGTG5N120BND by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for HGTG5N120BND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98B1932
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Newark | Single Igbt, 1.2Kv, 21A, Continuous Collector Current:21A, Collector Emitter Saturation Voltage:2.45V, Power Dissipation:167W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Onsemi HGTG5N120BND RoHS: Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 21A, 1200V, N-Channel, TO-247 RoHS: Compliant Status: Obsolete Min Qty: 1 | 412 |
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$1.2600 / $1.5800 | Buy Now |
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Chip Stock | TransIGBTChipN-CH1200V21A167000mW3-Pin(3+Tab)TO-247Rail | 41775 |
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RFQ | |
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Wuhan P&S | 1200V, NPT IGBT Min Qty: 1 | 30 |
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$1.9400 / $4.0000 | Buy Now |
Part Details for HGTG5N120BND
HGTG5N120BND CAD Models
HGTG5N120BND Part Data Attributes
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HGTG5N120BND
onsemi
Buy Now
Datasheet
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Compare Parts:
HGTG5N120BND
onsemi
1200V, NPT IGBT, TO-247-3, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-247-3 | |
| Package Description | To-247, 3 Pin | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | Low Conduction Loss | |
| Case Connection | Collector | |
| Collector Current-Max (IC) | 21 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | Single With Built-In Diode | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Motor Control | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Nom (toff) | 357 Ns | |
| Turn-on Time-Nom (ton) | 35 Ns |
Alternate Parts for HGTG5N120BND
This table gives cross-reference parts and alternative options found for HGTG5N120BND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG5N120BND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HGTG5N120BND | Intersil Corporation | Check for Price | 21A, 1200V, N-CHANNEL IGBT, TO-247 | HGTG5N120BND vs HGTG5N120BND |
HGTG5N120BND Frequently Asked Questions (FAQ)
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The maximum operating temperature of the HGTG5N120BND is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide adequate heat sinking and cooling for the HGTG5N120BND. This can be achieved by using a heat sink with a thermal resistance of 1.5°C/W or lower, and ensuring good thermal contact between the device and the heat sink. Additionally, maintaining good airflow around the device and heat sink can help to dissipate heat more efficiently.
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The recommended gate resistance for the HGTG5N120BND is between 10 ohms and 100 ohms. A gate resistance within this range helps to minimize oscillations and ensures stable operation of the device.
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Yes, the HGTG5N120BND can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive circuits are designed to minimize any differences in switching times between the devices.
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The recommended dead time for the HGTG5N120BND is typically in the range of 1-2 microseconds. This dead time helps to prevent cross-conduction and ensures reliable operation of the device.