Datasheets
HGTP11N120CN by:

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

Part Details for HGTP11N120CN by Harris Semiconductor

Overview of HGTP11N120CN by Harris Semiconductor

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Part Details for HGTP11N120CN

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HGTP11N120CN Part Data Attributes

HGTP11N120CN Harris Semiconductor
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HGTP11N120CN Harris Semiconductor Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 43 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 210 ns
Turn-on Time-Nom (ton) 21 ns

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