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Price Range
$2.2000 / $3.6800
Part Details
-
Manufacturer Part Number:
HGTP12N60C3D
-
Brand Name:
ON Semiconductor
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Not Recommended
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Ihs Manufacturer:
ON SEMICONDUCTOR
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Manufacturer Package Code:
340AT
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Reach Compliance Code:
compliant
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ECCN Code:
EAR99
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HTS Code:
8541.29.00.95
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Factory Lead Time:
1 Week
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Manufacturer:
ON Semiconductor
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Risk Rank:
7.74
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Additional Feature:
RC-IGBT
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Case Connection:
COLLECTOR
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Collector Current-Max (IC):
24 A
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Collector-Emitter Voltage-Max:
600 V
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Configuration:
SINGLE WITH BUILT-IN DIODE
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Fall Time-Max (tf):
275 ns
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Gate-Emitter Thr Voltage-Max:
6 V
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Gate-Emitter Voltage-Max:
20 V
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JEDEC-95 Code:
TO-220AB
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JESD-30 Code:
R-PSFM-T3
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JESD-609 Code:
e3
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Number of Elements:
1
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Number of Terminals:
3
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Operating Temperature-Max:
150 °C
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Operating Temperature-Min:
-40 °C
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Package Body Material:
PLASTIC/EPOXY
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Package Shape:
RECTANGULAR
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Package Style:
FLANGE MOUNT
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Peak Reflow Temperature (Cel):
NOT SPECIFIED
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Polarity/Channel Type:
N-CHANNEL
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Power Dissipation-Max (Abs):
104 W
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Qualification Status:
Not Qualified
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Surface Mount:
NO
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Terminal Finish:
Tin (Sn)
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Terminal Form:
THROUGH-HOLE
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Terminal Position:
SINGLE
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Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
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Transistor Application:
POWER CONTROL
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Transistor Element Material:
SILICON
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Turn-off Time-Max (toff):
675 ns
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Turn-off Time-Nom (toff):
480 ns
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Turn-on Time-Nom (ton):
48 ns
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VCEsat-Max:
2.2 V
CAD Models Information
Distributors with Stock
Total Inventory
3,323
- 1. Avnet Americas 1,702Buy Now
- 2. Future Electronics 1,365Buy Now
- 3. TME Electronic Components 209Buy Now
- 4. Newark 47Buy Now
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT15GT60KR Transistors | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Microsemi Corporation | HGTP12N60C3D vs APT15GT60KR |
| HGT1S7N60B3S9A Transistors | 14A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | HGTP12N60C3D vs HGT1S7N60B3S9A |
| IXGH39N60B Transistors | Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTP12N60C3D vs IXGH39N60B |
| HGTP10N50E1 Transistors | Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB | Harris Semiconductor | HGTP12N60C3D vs HGTP10N50E1 |
| IRG4BC40WS Transistors | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | HGTP12N60C3D vs IRG4BC40WS |
| MGP11N60E Transistors | TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,15A I(C),TO-220AB | Freescale Semiconductor | HGTP12N60C3D vs MGP11N60E |
| GT15J102 Transistors | TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT, TO-220IS, TO-220IS, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGTP12N60C3D vs GT15J102 |
| MGY25N120D Transistors | TRANSISTOR,IGBT,N-CHAN+DIODE,1.2KV V(BR)CES,38A I(C),TO-264 | Freescale Semiconductor | HGTP12N60C3D vs MGY25N120D |
| HGTG20N50C1D Transistors | 26A, 500V, N-CHANNEL IGBT, TO-247 | Rochester Electronics LLC | HGTP12N60C3D vs HGTG20N50C1D |
| IRG4BC40UPBF Transistors | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | HGTP12N60C3D vs IRG4BC40UPBF |
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