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HGTP7N60B3D by:

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Part Details for HGTP7N60B3D by Harris Semiconductor

Overview of HGTP7N60B3D by Harris Semiconductor

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Price & Stock for HGTP7N60B3D

Part # Distributor Description Stock Price Buy
DISTI # 2156-HGTP7N60B3D-ND
DigiKey IGBT, 14A, 600V, N-CHANNEL, TO-2 Min Qty: 278 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 16665
In Stock
  • 278 $1.0800
$1.0800 Buy Now
Rochester Electronics HGTP7N60 - N-Channel Insulated Gate Bipolar Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 98
  • 1 $1.0900
  • 25 $1.0700
  • 100 $1.0300
  • 500 $0.9829
  • 1,000 $0.9283
$0.9283 / $1.0900 Buy Now

Part Details for HGTP7N60B3D

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HGTP7N60B3D Part Data Attributes

HGTP7N60B3D Harris Semiconductor
Buy Now Datasheet
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HGTP7N60B3D Harris Semiconductor Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 14 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 80 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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