Part Details for HGTP7N60B3D by Harris Semiconductor
Overview of HGTP7N60B3D by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for HGTP7N60B3D
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTP7N60B3D-ND
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DigiKey | IGBT, 14A, 600V, N-CHANNEL, TO-2 Min Qty: 278 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
16665 In Stock |
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$1.0800 | Buy Now |
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Rochester Electronics | HGTP7N60 - N-Channel Insulated Gate Bipolar Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 98 |
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$0.9283 / $1.0900 | Buy Now |
Part Details for HGTP7N60B3D
HGTP7N60B3D CAD Models
HGTP7N60B3D Part Data Attributes
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HGTP7N60B3D
Harris Semiconductor
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Datasheet
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HGTP7N60B3D
Harris Semiconductor
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 14 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 80 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |